| 摘要 |
FIELD: physics. ^ SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm. ^ EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses. ^ 4 cl, 4 dwg |
