发明名称 |
Organic light emitting display with single crystalline silicon TFT and method of fabricating the same |
摘要 |
Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.
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申请公布号 |
US7816678(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20080175778 |
申请日期 |
2008.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NOGUCHI TAKASHI;XIANYU WENXU;YIN HUAXIANG |
分类号 |
H01L35/24;H01L21/00;H01L31/00;H01L51/00;H01L51/40 |
主分类号 |
H01L35/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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