SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM

摘要

PURPOSE: A solution composition for forming a metal oxide thin film, and an electronic device including the metal oxide thin film are provided to improve the threshold voltage and the current property of the electronic device. CONSTITUTION: A solution composition for forming a metal oxide thin film contains a first compound including zinc, a second compound including indium, and a third compound including magnesium. The atom number ratio of the zinc and the magnesium is 1:0.01~1:4. The third compound includes an element selected from the group consisting of magnesium acetate, magnesium chloride, magnesium nitrate, magnesium sulfate, and their hydrate.