发明名称 Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
摘要 In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.
申请公布号 US7816062(B2) 申请公布日期 2010.10.19
申请号 US20060592175 申请日期 2006.11.03
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 NAGATOMO WATARU;MOROKUMA HIDETOSHI;MIYAMOTO ATSUSHI;SASAZAWA HIDEAKI
分类号 G03F9/00;G03C5/00;G21G5/00 主分类号 G03F9/00
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