发明名称 |
Light-emitting diode device and manufacturing method thereof |
摘要 |
A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
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申请公布号 |
US7816703(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20080269407 |
申请日期 |
2008.11.12 |
申请人 |
DELTA ELECTRONICS, INC. |
发明人 |
CHEN CHAO-MIN;CHEN SHIH-PENG;SHIUE CHING-CHUAN;CHEN HUANG-KUN |
分类号 |
H01L33/00;H01L21/00;H01L33/10;H01L33/14 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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