发明名称 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
摘要 A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.
申请公布号 US7815733(B2) 申请公布日期 2010.10.19
申请号 US20070837557 申请日期 2007.08.13
申请人 NGK INSULATORS, LTD. 发明人 IWAI MAKOTO;IMAI KATSUHIRO;SASAKI TAKATOMO;KAWAMURA FUMIO;KAWAHARA MINORU;ISOBE HIROAKI
分类号 C30B11/00;C30B28/12 主分类号 C30B11/00
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