发明名称 COMPOSITION FOR ETCHING
摘要 PROBLEM TO BE SOLVED: To provide a composition for etching which can perform package etching a Cu wiring layer, an adhesion layer composed of Mo, an Mo alloy, a copper oxide, or a copper oxide alloy, and a capping metal when the Cu wiring layer is formed, and etching them in favorable tapered shapes without causing the generation of side-etching and an undercut. SOLUTION: The composition for etching includes (A) at least one component selected from a group composed of ammonia, a compound having an amino group and a compound with a cyclic structure containing nitrogen atom; (B) a hydrogen peroxide; and (C) an aqueous medium containing (A) and (B). The composition also has pH greater than 8.5 and can perform package etching a wiring layer composed of Cu or a Cu alloy, and a metallic layer composed of Mo, an Mo alloy and a copper oxide or a copper oxide alloy. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232486(A) 申请公布日期 2010.10.14
申请号 JP20090079391 申请日期 2009.03.27
申请人 NAGASE CHEMTEX CORP 发明人 OI YOSUKE;MUKAI YOSHIHIRO;NISHIJIMA YOSHITAKA
分类号 H01L21/308 主分类号 H01L21/308
代理机构 代理人
主权项
地址