PHOTOMASK BLANK, METHOD FOR PROCESSING THE SAME, AND ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a photomask blank including an application type silicon oxide film having higher etching resistance to chlorine dry etching, formed as a thin film and capable of achieving highly accurate processing, and to provide a photomask blank processing method which uses the silicon oxide film and an etching method of the film.

SOLUTION: In the photomask blank, a film constituted of one or more layers is formed on a transparent substrate, an outermost layer of the film is constituted of a chromium base material and an etching mask film for dry etching is formed on the outermost layer. The etching mask film is a silicon oxide base material film, formed by using a silicon oxide base material forming composition containing a hydrolytic condensate of a hydrolyzable silane, a crosslinking promoter compound and an organic solvent and having a film thickness of 1 to 10 nm.

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