| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile storage device, having a high yield by reducing failures in processing a storage part between wiring. SOLUTION: This nonvolatile storage device has a first electrode, a second electrode, and a first storage part provided between the first electrode and the second electrode while having a first storage layer in which resistance changes. A first electrode film 110f forming the first electrode and a first storage part film 130f forming the first storage part are laminated, they are processed to a belt shape extending in a first direction, and a sacrifice layer 181 is embedded. A second electrode film 140f forming the second electrode is formed on it, a mask layer 150 having a slower etching speed than that of the sacrifice layer is formed on it, the second electrode film 140f is processed to a belt shape extending in a second direction, the first storage part film 130f is processed to a columnar shape by removing a portion of a first storage part film 130f exposed from the sacrifice layer 181, and the sacrifice layer 181 is then removed to expose the first storage part film 130f and remove the first storage part film 130f. COPYRIGHT: (C)2011,JPO&INPIT
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