发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device having two or more kinds of light receiving elements with a reduced number of steps at a low cost. <P>SOLUTION: The method includes: forming an active region for a control circuit transistor 20 on a semiconductor substrate 18; and forming n-type wells 36, 44, p-type wells 38, 46 and the like which constitute photodiodes 22, 24, before forming the control circuit transistor 20. When the n-type wells 36, 44 and the like are formed on the semiconductor substrate 18, photoresists or the like are formed on the semiconductor substrate 18 with the active region being used as a positioning reference. Accordingly, the n-type wells 36, 44, p-type wells 38, 46 and the like are formed on the semiconductor substrate 18 with a high precision. Since it is not necessary to form a positioning mark preliminarily on the semiconductor substrate 18, the semiconductor device 10 is fabricated with the reduced number of steps, and thereby at a low cost. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232555(A) 申请公布日期 2010.10.14
申请号 JP20090080534 申请日期 2009.03.27
申请人 OKI SEMICONDUCTOR CO LTD 发明人 OKAMURA TOMOHIRO;OKIHARA MASAO
分类号 H01L31/10 主分类号 H01L31/10
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