| 摘要 |
An erase method of a nonvolatile semiconductor memory device including a semiconductor substrate with diffusion regions spaced from each other, a first insulating layer formed on the semiconductor substrate, a first gate electrode formed in a first area on the first insulating layer, a charge accumulation layer formed in a second area on the first insulating layer, a second insulating layer formed on the charge accumulation layer and a second gate electrode formed on the second insulating layer includes a step of injecting hot holes into the charge accumulation layer from the diffusion region and a step of injecting channel hot electrons into a part of the charge accumulation layer close to the first gate electrode side.
|
