| 摘要 |
<p>The invention relates to a method for p-type boron doping of silicon wafers placed on a stand in a furnace chamber, one end of which comprises a wall in which is arranged a means for injecting reactive gases and a gas carrying a boron precursor in the gaseous state, said method including the following steps: a) causing a reaction in the chamber between the reagent gases and boron trichloride BCl3 diluted in the carrier gas with a pressure of 1 kPa to 30 kPa, and a temperature of 800ºC to 1100ºC, so as to form a layer of boron trioxide B2O3, b) diffusing the atomic boron in the silicon in an atmosphere of N2+O2 with a pressure of 1 kPa to 30 kPa. The invention also relates to a furnace for implementing said doping method as well as to the uses thereof for producing large boron-doped silicon wafers, in particular for photovoltaic applications.</p> |
