发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory including a plurality of OTPs and having the functions of pseudo MTP with the access speed improved. <P>SOLUTION: The nonvolatile semiconductor memory 100s is equipped with an MT block section 12s which is a data storage section, and a memory controller 121s for storing a select address, and the MTP block section 12s is configured by including the OTP arrays 126s-1 to 126s-m. Regarding the nonvolatile semiconductor memory 100s, when the data are read out, any one among the OTP arrays 126s-1 to 126s-m is selected by the select address to output the data stored in the OTP array, and when the data are written in, the select address is updated; and the OTP array where the data is not written yet, of the OTP arrays 126s-1 to 126s-m is selected and the data are stored in the OTP array. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010231872(A) 申请公布日期 2010.10.14
申请号 JP20090081595 申请日期 2009.03.30
申请人 TOPPAN PRINTING CO LTD 发明人 DAIHISA HIROKI;ASANO MASAMICHI
分类号 G11C17/12;G11C16/04;G11C16/06 主分类号 G11C17/12
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