| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a CMOS inverter circuit using a highly integrated SGT (Surrounding gate transistor), by constituting the inverter using an island-shaped semiconductor. SOLUTION: The semiconductor device includes a first gate-insulating film surrounding the island-shaped semiconductor layer, a gate electrode surrounding the first gate-insulating film, a second gate-insulating film surrounding the gate electrode, and a cylindrical semiconductor layer surrounding the second gate-insulating film. Further, the semiconductor device includes a first-conductive highly dense semiconductor layer disposed on the upper part of the island-shaped semiconductor layer, a second first-conductive highly dense semiconductor layer disposed on the lower part of the island-shaped semiconductor layer, a first second-conductive highly dense semiconductor layer disposed on the upper part of the cylindrical semiconductor layer, and a second-conductive highly dense semiconductor layer disposed on the lower part of the cylindrical semiconductor layer. Pending problems are solved by the semiconductor device whose characteristic elements are described above. COPYRIGHT: (C)2011,JPO&INPIT
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