发明名称 |
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To more simply perform fine wiring of copper to a silicon nitride film in a thin film transistor substrate of a display device. SOLUTION: A TFT substrate on which the fine wiring is performed is provided with: a glass substrate 101 consisting of alkali free glass; a transparent conductive film 102 consisting of indium tin oxide; first conductive films 103 and 109 consisting of an alloy containing aluminum by four atom% and copper as a principal component; second conductive layers 104 and 110 which are copper wirings consisting of pure copper of purity 99.99%; a gate insulating film 106 consisting of silicon nitride; a semiconductor layer 107 consisting of amorphous silicon; a contact layer 108 consisting of n+ type amorphous silicon; and a metal oxide layer 105 of an interface between the transparent conductive film 102 and the first conductive layer 103. COPYRIGHT: (C)2011,JPO&INPIT
|
申请公布号 |
JP2010230965(A) |
申请公布日期 |
2010.10.14 |
申请号 |
JP20090078203 |
申请日期 |
2009.03.27 |
申请人 |
HITACHI DISPLAYS LTD |
发明人 |
TAKAHASHI TAKUYA;SUZUKI TAKAAKI |
分类号 |
G09F9/30;G02F1/1368;G09F9/00;H01L21/28;H01L21/3205;H01L23/52;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|