| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a through electrode with high reliability, and to provide a method of manufacturing the semiconductor substrate. <P>SOLUTION: A first wiring layer (3) is formed via a first insulating layer (2); and a second wiring layer (5) is formed at an inner periphery of the through hole (4). The through hole (4) comprises: a first opening (4a); and a second opening (4b) having smaller opening area than the first opening (4a), and has a third wiring layer (103a) formed at the second opening (4b), the third wiring layer (103a) being formed before the first opening (4a) is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
