| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based HEMT that is formed by utilizing a GaN-HEMT on Si substrate and prevents carrier storage layers from existing in the multilayer (GaN/AlN) buffer layer and Si substrate. SOLUTION: A method of manufacturing an HEMT includes a support substrate adhesion process for adhering the surface of an epitaxial growth layer 40 and one surface 44a of a support substrate 44 by a hot-melt adhesive 42, an Si substrate removal process for removing an Si substrate 10 by allowing the epitaxial growth layer to remain, a junction process for joining one surface 46a of a bonded substrate 46 to a surface 40-1a (surface of an AlN nucleation layer 12-1) of the epitaxial growth layer, and a support substrate peeling process for peeling the support substrate by melting the hot-melt adhesive for adhering the epitaxial growth layer. COPYRIGHT: (C)2011,JPO&INPIT
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