| 摘要 |
PROBLEM TO BE SOLVED: To solve problems in application of a field effect transistor to a conventional optical element in which a light shielding area must be set around the transistor to suppress leak of light in a PN junction portion, resulting in an increased circuit area, and the light shielding property to reflected light is insufficient. SOLUTION: The field effect transistor 300 includes a light shielding member 109 provided on a gate electrode 105 so as to flatly overlap with the PN junction portion 201. The PN junction portion can be light-shielded by the light shielding member. Since the area of the field effect transistor is not increased, the circuit area can be set small. COPYRIGHT: (C)2011,JPO&INPIT
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