| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem: it is difficult to establish compatibility between the high reliability of an n-type MIS transistor and the high performance of a p-type MIS transistor when a sidewall width is the same in the n-type MIS transistor and the p-type MIS transistor. SOLUTION: A semiconductor device includes the n-type MIS transistor and the p-type MIS transistor. The n-type MIS transistor includes a first gate insulating film 13a and a first gate insulating electrode 14a which are sequentially formed on a first active region 10a in the semiconductor substrate 10, and a first side wall 16a formed on the side surface of the first gate electrode 14a. The p-type MIS transistor includes a second gate insulating film 13b and a second gate electrode 14b which are sequentially formed on a second active region 10b in the semiconductor substrate 10, and a second side wall 16b formed on the side surface of the second gate electrode 14b. The second side wall 16b has a side wall width smaller than that of the first side wall 16a. COPYRIGHT: (C)2011,JPO&INPIT
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