| 发明名称 |
METHOD OF MANUFACTURING OF PCRAM DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a phase change RAM device is provided to improve a current property of a diode by securing a diode operation current. CONSTITUTION: An interlayer insulation layer is formed on a silicon substrate(100) including a cell region. A plurality of holes are formed by etching the interlayer insulation layer on the cell region. A switching device is formed in the hole. A nitride layer(150) is formed on the interlayer insulation layer.</p> |
| 申请公布号 |
KR20100110634(A) |
申请公布日期 |
2010.10.13 |
| 申请号 |
KR20090029068 |
申请日期 |
2009.04.03 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, KEUM BUM;KI, YOUNG JONG;LEE, HYUNG SUK |
| 分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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