| 摘要 |
The present invention provides a method for forming a NiO resistive memory element comprising a NiO resistive switching layer (31). The method comprises obtaining a substrate (34), providing a Ni layer on the substrate, and at least partially oxidizing the Ni layer, thus forming the NiO resistive switching layer (31), wherein obtaining a substrate comprises obtaining a substrate which promotes subsequent formation of Ni grains with slower oxidizing crystal orientations, e.g. (111) orientations, and/or suppresses formation of Ni grains with faster oxidizing crystal orientations, e.g. (100) orientations. This may be obtained, for example, by providing on the substrate, a N-rich, Ti-poor TiN bottom electrode layer. By providing a substrate which promotes subsequent formation of Ni grains with slower oxidizing crystal orientations and/or suppresses formation of Ni grains with faster oxidizing crystal orientations, resistive memory elements with good switching properties may be formed.
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