发明名称 Write circuit of memory device
摘要 A write circuit of a semiconductor memory device includes a global data input/output (I/O) line; an amplifying block for receiving and amplifying write data and transmitting the amplified write data as global data onto the global data I/O line; and a control block for comparing the write data with the global data to thereby disable the amplifying block when the write data and the global data have substantially the same data value.
申请公布号 US7813197(B2) 申请公布日期 2010.10.12
申请号 US20080027068 申请日期 2008.02.06
申请人 发明人 SHIN BEOM-JU
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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