发明名称 Pass gate with improved latchup immunity
摘要 An integrated circuit includes a pass gate having an input and an output. An NMOS pass transistor is connected between the input and the output. The drain of the NMOS pass transistor is connected to the input and the source of the NMOS pass transistor is connected to a node between the source of the NMOS transistor and the output of the pass gate. A current clamp is connected between the node and a current sink so as to conduct current to the current sink when the node reaches a threshold value.
申请公布号 US7812642(B1) 申请公布日期 2010.10.12
申请号 US20090464675 申请日期 2009.05.12
申请人 XILINX, INC. 发明人 JENNINGS JOHN K.;KARP JAMES;KIREEV VASSILI;QUINN PATRICK J.
分类号 H03K19/20 主分类号 H03K19/20
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