SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to obtain a buffer layer having a conductivity which is higher than that of an oxide semiconductor layer by reducing contact resistance. CONSTITUTION: A gate electrode layer is formed on a substrate. A gate insulating layer is formed on the gate electrode layer. A conductive film is formed on the gate insulating layer. A first oxide semiconductor film is formed on the conductive film. The conductive film and the first oxide semiconductor film are etched. A source electrode layer and a drain electrode layer(105a, 105b) are formed. A second oxide semiconductor film is formed on the source electrode layer. A third oxide semiconductor film is formed on the drain electrode layer.