发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
摘要 PURPOSE: The semiconductor device and formation method the semiconductor device with a superior quality the peripheral circuit is formed on the spark region and formation method can be offered. The opening having the high level difference offers the removed semiconductor device and a method of formation thereof and the quality excellent. CONSTITUTION: The semiconductor device and formation method comprises the recess region(106) and the spark region(108) including the floor side and side are formed on the semiconductor substrate. Plateau on the floor side of the recess region and the sidewall part expanded from plateau as the side are included.
申请公布号 KR20100109745(A) 申请公布日期 2010.10.11
申请号 KR20090028159 申请日期 2009.04.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, JAE JOO;KIM, HAN SOO;CHO, WON SEOK;SHIM, SUN IL;LIM, JU YOUNG
分类号 H01L21/82 主分类号 H01L21/82
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