QUASI-VERTICAL LIGHT EMITTING DIODE

摘要

A quasi-vertical light emitting device is provided. The quasi-vertical light emitting diode includes a sapphire substrate (110); a plurality of semiconductor layers grown on the sapphire substrate (110), the plurality of semiconductor layers including an n-GaN layer (112), an active layer (114), and a p-GaN layer (116); a plurality of holes etched in the plurality of semiconductor layers, each of the plurality of holes (120) etched to the sapphire substrate (110), and a plurality of sapphire holes (700) in the sapphire substrate, each of the plurality of holes (120) aligned with one of the plurality of sapphire holes (700) to form hole walls, the hole walls and bottom deposited with an n-metal (1300) and each of the plurality of holes (120) filled with another metal to form a n-electrode contact; an n-mesa in the active layer (114) and the p-GaN layer (116), the n-mesa deposited with an n-metal (1300) and a passivation layer (1900) grown over the n-metal (1300); and a p-metal (1000) layer deposited on the p-GaN layer (116), and a p-electrode (2200) bonded to the p-metal (1000).