发明名称 END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS
摘要 An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
申请公布号 US2010252746(A1) 申请公布日期 2010.10.07
申请号 US20090418053 申请日期 2009.04.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 SINCLAIR FRANK;RADOVANOV SVETLANA B.;PURSER KENNETH H.
分类号 H01J3/14 主分类号 H01J3/14
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