| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably generate gettering effects, without reducing traverse rupture strength of a semiconductor device, during processing for forming a wafer into predetermined thickness. <P>SOLUTION: A polishing pad 340 is structured by mixing abrasive grains and alkali grains, whose grain size is 0.1 μm or less, inside of foamed urethane and forming a plurality of hexagonal pellets, in each of which a polishing surface is partitioned by a groove. The polishing pad 340 is brought into contact with a wafer W held by a chuck table 2 and while feeding pure water to the wafer W, the wafer W is polished by rotating the chuck table 2 and the abrasive pad 340. Thus, gettering effects are stably generated without reducing the traverse rupture strength of the device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
