| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature control device with excellent heating responsiveness and cooling responsiveness without complicating a device structure even if commonly using a cooling layer and a heating layer. SOLUTION: The temperature control device includes a susceptor 12 for placing a wafer, and a shower head 22 arranged to face the susceptor 12, excites a processing gas supplied between the susceptor 12 and the shower head 22 thereby to generate plasma, and controls a temperature of a member to be exposed to plasma in a substrate treatment apparatus performing plasma treatment on the wafer by the use of the plasma. The temperature control device includes a heating layer 31 configured to heat an upper electrode plate 24 arranged in the shower head 22, a heat insulating layer 32 positioned in contact with an opposite surface to the surface of the heating layer 31 which faces the upper electrode plate 24, and a cooling layer 33 positioned in contact with an opposite surface to the surface of the heat insulating layer 32 which faces the heating layer 31. Flowing water is used as the cooling medium of the cooling layer 33. COPYRIGHT: (C)2011,JPO&INPIT |
