| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element by which excellent light confinement is achieved, the adhesion of a protection film to both sides of a ridge is secured, output characteristics to input a current is improved, and a long life is obtained at a low threshold in the nitride semiconductor laser element. SOLUTION: The nitride semiconductor laser element includes: a substrate; a nitride semiconductor layer on which a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer are laminated on the substrate in this order; and a ridge disposed on a surface of the nitride semiconductor layer. In the nitride semiconductor laser element, there is formed a groove formed of a side surface being a surface which is continuously extended in a direction of a resonator from a surface of the ridge to a surface of the nitride semiconductor layer at both sides of the ridge. COPYRIGHT: (C)2011,JPO&INPIT |
