| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output terahertz wave radiating element. SOLUTION: A terahertz wave radiating element 10 is provided with: an Si substrate 101; an undoped GaN layer 103 formed on the Si substrate 101; an undoped AlGaN layer 104 formed on the undoped GaN layer 103 and having a band gap that is different from that of the undoped GaN layer 103; a gate electrode 106 formed on the undoped AlGaN layer 104; and a source electrode 105 and a drain electrode 107 which are electrically connected with the undoped GaN layer 103. By causing electric current to flow between the source electrode 105 and the drain electrode 107, terahertz electromagnetic waves are generated at the lower part of the gate electrode 106. The generated terahertz electromagnetic waves are radiated from the lower surface of the Si substrate 101. COPYRIGHT: (C)2011,JPO&INPIT
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