| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of using microcrystal silicon as a channel region and excellently suppressing a leakage current, and to provide a method of manufacturing the same. SOLUTION: The thin-film transistor 100 includes, as indicated in Fig.1, a substrate 11, a gate electrode 112, a gate insulating film 113, a semiconductor layer (channel region) 114, an etching stopper film 115, heavily doped amorphous silicon layers 116 and 117, a drain electrode 118, a source electrode 119, and lightly doped semiconductor layers 120 and 121. Between the channel region 114 using the microcrystal silicon and the heavily doped amorphous silicon layer 116 and/or the heavily doped amorphous silicon layer 117, the lightly doped semiconductor layers 120 and 121 are provided. COPYRIGHT: (C)2011,JPO&INPIT
|
