PRODUCTION OF A MICROELECTRONIC DEVICE COMPRISING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR, THE GATE OF WHICH IS PRODUCED IN THE SAME LAYER AS THE MOVABLE STRUCTURE OF SAID COMPONENT

摘要

The invention relates to a method for producing a microelectronic device that includes, on a single substrate (100, 200), at least one electromechanical component (C) having a movable monocrystalline semiconductor structure and means for actuating and/or detecting the movable structure, and at least one transistor (T). The method includes the following steps consisting in: a) providing a substrate that has at least one first semiconducting layer (100, 200) comprising at least one region (104, 204) in which a channel area of the transistor is provided; and b) etching a second semiconducting layer (112, 212) made of a given semiconducting material and resting on an insulating layer (106, 206) that is placed on the first semiconducting layer, so as to form at least one pattern (M1) of the movable structure of the component in a monocrystalline semiconductor area (112a, 212a) of the second semiconducting layer, as well as at least one gate pattern (M'1) of the transistor opposite the above-mentioned region.