发明名称 SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To form crystal thin films of compound semiconductors on inexpensive Si substrates. SOLUTION: A semiconductor substrate includes a base substrate, an insulating layer, and an Si crystal layer in this order. The semiconductor substrate includes an annealed seed crystal provided on the Si crystal layer, and a compound semiconductor subjected to lattice matching or pseudo lattice matching to the seed crystal. An electronic device includes a substrate, an insulating layer provided on the substrate, an Si crystal layer provided on the insulating layer, an annealed seed crystal provided on the Si crystal layer, a compound semiconductor subjected to lattice matching or pseudo lattice matching to the seed crystal, and a semiconductor device formed by the compound semiconductor. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010226079(A) 申请公布日期 2010.10.07
申请号 JP20090229216 申请日期 2009.10.01
申请人 SUMITOMO CHEMICAL CO LTD 发明人 HATA MASAHIKO
分类号 H01L21/20;H01L21/331;H01L21/336;H01L21/8222;H01L21/8234;H01L27/06;H01L27/08;H01L27/082;H01L27/088;H01L29/737;H01L29/786 主分类号 H01L21/20
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