| 摘要 |
Disclosed is a method of making polysiloxane and polysilsesquioxane hardmask layer photo-imageable with a negative tone. The method is based on a photosensitizer and film modifier. The film modifier reduces pore size of the hardmask films for diffusion control. The negative-tone photo-imageable hardmask is especially beneficial for forming trenches and vias on exposure tools of extreme UV and deep UV lithography. Compositions of negative-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Further disclosed are processes of using photo-imageable hardmasks to create isolated trenches or vias on semiconductor substrates with or without an intermediate layer.
|
