| 摘要 |
<p>Magnetic memory is provided with an insulating layer, a magnetic recording layer formed on the insulating layer, a tunnel barrier layer, and a pin layer. The magnetic recording layer has: a magnetization invertible region which has invertible magnetization and faces the pin layer with the tunnel barrier layer therebetween; a first magnetization fixed region which is connected to the magnetization invertible region and has the magnetization direction fixed in the first direction; and a second magnetization fixed region which is connected to the magnetization invertible region and has the magnetization direction fixed to the second direction. In the insulating layer, steps are provided at a position that corresponds to the boundary between the first magnetization fixed region and the magnetization invertible region, and at a position that corresponds to the boundary between the magnetization invertible region and the second magnetization fixed region, respectively. Thus, in the magnetic recording layer, a first step is formed on the boundary between the first magnetization fixed region and the magnetization invertible region, and a second step is formed on the boundary between the magnetization invertible region and the second magnetization fixed region.</p> |
