PLASMA ETCHING APPARATUS

摘要

Disclosed is an etching apparatus which is capable of uniformly etching the entire surface of a substrate even when the substrate is large, and in which deterioration of etching shapes does not occur. Specifically disclosed is an etching apparatus (1) which comprises: a chamber (2) that has a plasma formation space (9) and a processing space (6); a coil (16) which is provided on the outside of a portion of the chamber corresponding to the plasma formation space (9); a stage (10) which is provided in the processing space (6) and on which a substrate (K) is to be placed; a process gas supply mechanism (19) for supplying a process gas into the plasma formation space (9); a high-frequency power supply mechanism (17) for supplying high-frequency power to the coil (16); and a stage power supply mechanism (13) for supplying high-frequency power to the stage (10). A cylindrical plasma density adjusting member (20), which is configured of a grounded conductive material, is affixed to the inner wall of the chamber (2) between the plasma formation space (9) and the stage (10). During when plasma passes through the plasma density adjusting member (20), the in-plane density thereof is leveled, and then the plasma is guided to the substrate (K).