| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor capable of inhibiting suitably lowering a proof amount against the destruction of a thin film structural part caused by defects regardless of positions of the defects. <P>SOLUTION: The flow sensor FS is constituted by providing a semiconductor substrate 10, and on the hollow part H of the semiconductor substrate 10 the thin film structured part MB is formed. At the neighbor of the four corner part of the thin film structured part MB, the upstream heater Rha and the downstream heater Rhb are formed with a part of the conductor film 20 which functions as a reinforcement member of the thin film structured part MB. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
