发明名称 VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY
摘要 <p>A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array.</p>
申请公布号 EP1913596(B1) 申请公布日期 2010.10.06
申请号 EP20060761198 申请日期 2006.07.31
申请人 MOSAID TECHNOLOGIES INCORPORATED 发明人 PYEON, HONG BEOM;MILLAR, BRUCE
分类号 G11C5/14;G11C11/4074;H02M3/155;H02M3/158 主分类号 G11C5/14
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