| 摘要 |
PURPOSE: A manufacturing method and a manufacturing device thereof are provided to improve the purity of poly-silicon by preventing the generation of silicon carbide inside a silicon container. CONSTITUTION: Silicon metal(21) is manufactured in a blast furnace(12). Molten silicon(22) is formed by melting the silicon metal in a vacuum state. A poly-silicon(23) is formed by cooling the molten silicon. The vacuum state is released. The surface of the poly-silicon is cut.
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