Solid-state imaging element and driving method of the solid-state imaging element

摘要

Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region (20) formed in a semiconductor layer (12), the light reception/charge storage region (20) including M light reception/charge storage layers (21,22,23) stacked one on top of the other, where M ≥ 2; (B) a charge output region (40) formed in the semiconductor layer (12); (C) a conduction/non-conduction control region (50) which includes a portion of the semiconductor layer (12) located between the light reception/charge storage region (20) and the charge output region (40); and (D) a conduction/non-conduction control electrode (60) adapted to control the conduction or non-conduction state of the conduction/non-conduction control region (50), wherein mth potential control electrodes (31,32) are provided between the mth and (m+1)th light reception/charge storage layers, where 1 ≤ m ≤ (M-1), to control the potentials of the light reception/charge storage layers (21,22,23).