| 摘要 |
<p>The relay has a subassembly connected to a consumer load (L) and a supply voltage. The subassembly includes a rectifier (D1) and an FET (T1) i.e. p-channel MOSFET, that is switched in an array between the rectifier and an input switch (S2). The FET is formed as an enhanced type power MOSFET for switching a high power rating. A over voltage protection element is connected between a source and a drain of the MOSFET and includes a suppressor diode (D2). The protection element against the over voltage is connected between a set of connecting terminals (15, 31) of the rectifier.</p> |
