High-electron-mobility transistor and manufacturing method for the same,申请号KR20080035977-传众专利搜索

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发明名称	High-electron-mobility transistor and manufacturing method for the same
摘要
申请公布号	KR100985470(B1)	申请公布日期	2010.10.06
申请号	KR20080035977	申请日期	2008.04.18
申请人		发明人
分类号	H01L29/778	主分类号	H01L29/778
代理机构		代理人
主权项
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