| 摘要 |
PURPOSE: A method for supplying source gas is provided to constantly control an amount of source gas inputted to a deposition chamber by referring to a value obtained by integrating partial pressure of source gas inputted to the deposition chamber on time. CONSTITUTION: A glass substrate is loaded on a deposition chamber(110). The deposition chamber provides a space for forming a film on the glass substrate. A pump(120) easily discharges gas from the deposition chamber. A source material depositing unit(130) stores source materials(132) to generate source gas supplied to the deposition chamber. A heater(134) is installed around the source material deposition unit. A carrier gas supply unit(140) supplies the source gas generated from the source gas deposition unit to the deposition chamber and the pump.
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