| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that the uniformity of etching shape among wafers aggravates by temperature fluctuation during continuous processing and during stoppage because the etching performance of wafers varies by temperature. SOLUTION: The inner wall of an reactor is heated up to optimal temperature by plasma discharging prior to etching processing, and while taking a period of etching operation stoppage (idling) into account, the generation of plasma 402 is intermittently repeated during idling, so as to keep the surface temperature of inner wall of a vacuum processing chamber. The emission intensity of a processing gas correlated with the surface temperature of inner wall of the vacuum processing chamber is measured to control the intermittent generation of plasma 402. COPYRIGHT: (C)2010,JPO&INPIT
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