| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress an increase in contact resistance between a lower electrode and a via interconnect and has a capacitive element, and a method of manufacturing the same. SOLUTION: The semiconductor device includes the capacitive element formed on a semiconductor substrate 101 and having the lower electrode 110, a dielectric film 120, and an upper electrode 130. The lower electrode 110 of the capacitive element has a metal film 111 which is, for example, a Ti film, and TiN film 113 formed on the metal film 111. The semiconductor device further includes an insulating film 142 covering the capacitive element, and the via interconnect 150 penetrating the insulating film 142 to come into contact with the TiN film 113 of the lower electrode 110. The TiN film 113 is preferably <30 nm thick. On at least a part of a surface of the Ti film 111, a nitride layer 112 is formed by nitriding the Ti film 111 to be interposed between the via interconnect 150 and the Ti film 111. COPYRIGHT: (C)2010,JPO&INPIT |
