发明名称 FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film forming method capable of reducing variations in a film thickness between substrates when forming a prescribed film by vaporizing and supplying a liquid film forming raw material containing an organic metal compound. SOLUTION: In the film forming method of forming a metal-containing film on a substrate by vaporizing a film forming raw material composed by diluting a hydrolytic organic metal compound with a solvent in a vaporizer and supplying the vaporized film forming raw material onto the substrate, a moisture content in the film forming raw material to be supplied to the vaporizer is turned to such an amount that the amount of hydrolysate generated by reaction with the organic metal compound does not practically clog a film forming raw material supply system including the vaporizer. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010219292(A) 申请公布日期 2010.09.30
申请号 JP20090064300 申请日期 2009.03.17
申请人 TOKYO ELECTRON LTD 发明人 IWATA TERUO
分类号 H01L21/316 主分类号 H01L21/316
代理机构 代理人
主权项
地址