| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor single crystal by an FZ method (a floating zone method or a floating zone melting method) controllable of an in-plane resistivity distribution of the produced semiconductor single crystal in the radial direction and particularly reducing the variation of in-plane resistivity. Ž<P>SOLUTION: The method for producing the semiconductor single crystal by the FZ method using a gas doping technique for jetting at least a dopant gas toward a floating zone to dope the semiconductor single crystal with the dopant and obtain the desired resistivity. The semiconductor single crystal is produced beforehand and the in-plane resistivity distribution of the produced semiconductor single crystal in the radial direction is acquired at the least. When the semiconductor single crystal being a product is produced, the amount of the dopant to be used for doping the semiconductor single crystal being the product with the dopant by using the gas doping technique is adjusted according to the beforehand acquired in-plane resistivity distribution during the time to form a straight drum part thereof so that the in-plane resistivity distribution of the semiconductor single crystal being the product in the radial direction is controlled. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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