METHOD FOR TREATING SUBSTRATE, AND PROCESS FOR MANUFACTURING CRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE

摘要

Disclosed is a method for treating a substrate, which can prevent the occurrence of surface roughening in a crystalline silicon carbide (SiC) substrate when the substrate is annealed. Also disclosed is a process for manufacturing a silicon carbide (SiC) substrate. An embodiment of the method for treating a substrate comprises the steps of: irradiating a monocrystalline silicon carbide (SiC) substrate (1) with plasma; and heating the monocrystalline silicon carbide (SiC) substrate (1) that has been irradiated with plasma at a high temperature.