摘要 |
A semiconductor structure includes a substrate having a first nitride-based semiconductor layer. A pseudomorphic protective layer is formed on the first nitride-based semiconductor layer and a second nitride-based semiconductor layer is formed on the pseudomorphic protective layer. The pseudomorphic protective layer has a thickness that is less than a critical thickness so that it drives the material quality of the second nitride-based semiconductor layer to correspond with that of the first nitride-based semiconductor layer.
|